Skip to main content

capacitor

INTRODUCTION :


The capacitor is a component which has the ability or “capacity” to store energy in the form of an electrical charge producing a potential difference (Static Voltage) across its plates, much like a small rechargeable battery.

CAPACITANCE :


Capacitance is the electrical property of a capacitor and is the measure of a capacitors ability to store an electrical charge onto its two plates with the unit of capacitance being the FARD (abbreviated to F) named after the British physicist Michael Faraday.



Capacitance is defined as being that a capacitor has the capacitance of One Farad when a charge of One Coulomb is stored on the plates by a voltage of One volt. Capacitance, C is always positive and has no negative units. However, the Farad is a very large unit of measurement to use on its own so sub-multiples of the Farad are generally used such as micro-farads, nano-farads and pico-farads, for example.

Standard Units of Capacitance



  • Micro farad  (μF)   1μF = 1/1,000,000 = 0.000001 = 10-6 F

  • Nano farad  (nF)   1nF = 1/1,000,000,000 = 0.000000001 = 10-9 F

  • Pico farad  (pf)   pf = 1/1,000,000,000,000 = 0.000000000001 = 10-12 F


CONSTRUCTION & WORKING  :


The basic construction of all capacitors is of two parallel metal plates separated by an insulating material.

Untitled-2.jpg

TYPES :


Capacitors are divided into two mechanical groups: Fixed capacitors with fixed capacitance values and variable capacitors with variable (trimmer) or adjustable (tunable) capacitance values.

Fixed_capacitors_overview.svg.png

CAPACITOR IN SERIES & PARALLEL :


Untitled-3.jpg

Comments

Post a Comment

Popular posts from this blog

voltage

Voltage, is is the difference in potential between two points  in an electric field. also called electromotive force. voltage is the   pressure from an electrical circuit’s power source that pushes charged electrons (current).           grater the voltage grater the flow of electric current. Voltage is symbolized by   V or E . The standard unit is the volt. One volt will drive one columb  (6.24 x 10 18 ) charge.such as electronics through a resistance of one ohm. Voltage can be direct or alternating. A direct voltage maintains the same polarity. In an alternating voltage, the polarity reverses direction periodically. The number of complete cycles per second is the frequency which is measured in hertz.

BJT (bipolar junction transistor)

A bipolar junction transistor is a three terminal semiconductor current controlled device with two P-N junctions. The three terminals are emitter(E), base(B) and collector(C). the emitter junction is heavily doped, base is less doped and made very thin and collector terminal is moderately doped. Collector has grater size than emitter and base terminal is thinner than both. (The thinner the base, the stronger the E-C electric field, and the larger the impact of a small current injected into the base. Explained clearly in active mode operation below) emitter terminal is moderate in size. A BJT has two types of transistors: NPN transistor PNP transistor NPN transistor : In an NPN transistor a p-type material is sandwiched between two n-type materials. [gallery ids="979,978" type="rectangular"] PNP transistor : In a PNP transistor a n-type material is sandwiched between two p-type materials. [gallery ids="989,990" type="rectangular"] Oper...

P-N junction diode

A P-N junction diode is a basic diode. It is the combination of P-type and N-type semiconductor. symbol : P-N junction and potential barrier : A P-N junction is the basic building block of many semiconductor devices like diodes and transistors. P -n  junctions are formed by joining  n -type and  p -type semiconductor materials. Since the  n -type region has a high electron concentration and the  p -type a high hole concentration this difference in concentration creates density mismatch across junction which results to creation of potential barrier. The value of potential barrier v b  is 0.3 for germanium and 0.7 for silicon. Working : Forward bias: Application of positive charge at p-side pushes holes towards potential barrier and similarly negative charge at N-side pushes electrons towards barrier if input voltage is grater than potential barrier then electrons diffuse from the  n -type side to the p-type side. Similarly, holes flow by diffusion from the p-type side to the n-type side...