Skip to main content

resistance & resistivity

Resistance is a measure of the opposition to current flow in an electrical circuit.


Resistance is measured in ohms, symbolized by the Greek letter omega (Ω). Ohms are named after George Simon Ohm (1784-1854), a German physicist who studied the relationship between voltage, current and resistance. He is credited for formulating Ohm’s Law.

The electrical resistance of a circuit component or device is defined as the ratio of the voltage applied to the electric current which flows through it.

The higher the resistance, the lower the current flow and vice-versa.



ohms-law-cartoon-cropped

resistivity :


The electrical resistance per unit length, area, or volume of a substance is known as resistivity.


Table of resistivity




























































































































































MaterialResistivity ρ
(ohm m)
Temperature
coefficient α
per degree C
Conductivity σ
x 107 /Ωm
Ref
Silver1.59x10-8.00386.293
Copper1.68x10-8.003865.953
Copper, annealed1.72x10-8.003935.812
Aluminum2.65x10-8.004293.771
Tungsten5.6x10-8.00451.791
Iron9.71x10-8.006511.031
Platinum10.6x10-8.0039270.9431
Manganin48.2x10-8.0000020.2071
Lead22x10-8...0.451
Mercury98x10-8.00090.101
Nichrome
(Ni,Fe,Cr alloy)
100x10-8.00040.101
Constantan49x10-8...0.201
Carbon*
(graphite)
3-60x10-5-.0005...1
Germanium*1-500x10-3-.05...1
Silicon*0.1-60...-.07...1
Glass1-10000x109......1
Quartz
(fused)
7.5x1017......1
Hard rubber1-100x1013......1

learn about resistor and resistor color codes 

Comments

  1. […] Kirchhoff Current and Voltage laws. These laws are very helpful in determining the equivalent electrical resistance or impedance (in case of AC) of a complex network and the currents flowing in the various branches […]

    ReplyDelete
  2. […] →1.3 Resistance & Resistivity […]

    ReplyDelete

Post a Comment

Popular posts from this blog

voltage

Voltage, is is the difference in potential between two points  in an electric field. also called electromotive force. voltage is the   pressure from an electrical circuit’s power source that pushes charged electrons (current).           grater the voltage grater the flow of electric current. Voltage is symbolized by   V or E . The standard unit is the volt. One volt will drive one columb  (6.24 x 10 18 ) charge.such as electronics through a resistance of one ohm. Voltage can be direct or alternating. A direct voltage maintains the same polarity. In an alternating voltage, the polarity reverses direction periodically. The number of complete cycles per second is the frequency which is measured in hertz.

BJT (bipolar junction transistor)

A bipolar junction transistor is a three terminal semiconductor current controlled device with two P-N junctions. The three terminals are emitter(E), base(B) and collector(C). the emitter junction is heavily doped, base is less doped and made very thin and collector terminal is moderately doped. Collector has grater size than emitter and base terminal is thinner than both. (The thinner the base, the stronger the E-C electric field, and the larger the impact of a small current injected into the base. Explained clearly in active mode operation below) emitter terminal is moderate in size. A BJT has two types of transistors: NPN transistor PNP transistor NPN transistor : In an NPN transistor a p-type material is sandwiched between two n-type materials. [gallery ids="979,978" type="rectangular"] PNP transistor : In a PNP transistor a n-type material is sandwiched between two p-type materials. [gallery ids="989,990" type="rectangular"] Oper...

P-N junction diode

A P-N junction diode is a basic diode. It is the combination of P-type and N-type semiconductor. symbol : P-N junction and potential barrier : A P-N junction is the basic building block of many semiconductor devices like diodes and transistors. P -n  junctions are formed by joining  n -type and  p -type semiconductor materials. Since the  n -type region has a high electron concentration and the  p -type a high hole concentration this difference in concentration creates density mismatch across junction which results to creation of potential barrier. The value of potential barrier v b  is 0.3 for germanium and 0.7 for silicon. Working : Forward bias: Application of positive charge at p-side pushes holes towards potential barrier and similarly negative charge at N-side pushes electrons towards barrier if input voltage is grater than potential barrier then electrons diffuse from the  n -type side to the p-type side. Similarly, holes flow by diffusion from the p-type side to the n-type side...