- Electrostatics
- Columb’s law
- Electric Flux density & Electric field intensity
- Magnetic Flux density &Magnetic field intensity
- Gauss law
- Energy density
- Continuity equation
- Magneto statics
- Biot- savart law
- Amperes circuit law
- Magnetic momentum & magnetic flux
- Boundary conditions
- Applications (Hall effect)
- Lorentz force equation
- conduction, polarization & magnetization
- Maxwell equations
- Law of conservation of charge & boundary conditions
- Hertzian dipole
A P-N junction diode is a basic diode. It is the combination of P-type and N-type semiconductor. symbol : P-N junction and potential barrier : A P-N junction is the basic building block of many semiconductor devices like diodes and transistors. P -n junctions are formed by joining n -type and p -type semiconductor materials. Since the n -type region has a high electron concentration and the p -type a high hole concentration this difference in concentration creates density mismatch across junction which results to creation of potential barrier. The value of potential barrier v b is 0.3 for germanium and 0.7 for silicon. Working : Forward bias: Application of positive charge at p-side pushes holes towards potential barrier and similarly negative charge at N-side pushes electrons towards barrier if input voltage is grater than potential barrier then electrons diffuse from the n -type side to the p-type side. Similarly, holes flow by diffusion from the p-type side to the n-type side...
[…] →2.1 Fundamentals of Electromagnetics […]
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