Skip to main content

N-type semiconductor

The extrinsic n Type Semiconductor is formed, when a pentavalent impurity is added to a pure silicon or germanium atom in small amount and as result large number of electrons are created in it.

A pentavalent impurity like phosphorous, arsenic, antimony, antimony, bismuth, lithium

Antimony have having five valence electrons but, silicon or germanium need only four valance electrons. it forms four covalent bonds. But, one electron will be left excess in Antimony Thus, each Antimony atom leaves one excess electron in the germanium crystal.

As an extremely small amount of Antimony impurity has a large number of atoms, therefore, it provides millions of electrons in the semiconductor.
diode2Energy band diagram :


image4148018826127983080_4344358628830754028

Comments

Post a Comment

Popular posts from this blog

Transistor

Introduction: A transistor is a semiconductor device which is used to amplify the signals as well as in switching circuits. Generally, it consists of three terminals emitter(E), base(B) and collector(C) and two P-N junctions. It is one of the active components. It was invented by John Bardeen, William Shockley and Walter Brattain in 1948, in Bell Telephone Laboratories. Transistors are divided into different types depending on their construction and operation. Transistors are basically classified into two types; they are Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). The BJTs are again classified into NPN and PNP transistors. The FET transistors are classified into JFET and MOSFET. Junction FET transistors are classified into N-channel JFET and P-channel JFET depending on their function. MOSFET transistors are classified into Depletion mode and Enhancement mode. Again depletion and enhancement mode transistors are classified into N-channel JFET and P-channel. d...

BJT (bipolar junction transistor)

A bipolar junction transistor is a three terminal semiconductor current controlled device with two P-N junctions. The three terminals are emitter(E), base(B) and collector(C). the emitter junction is heavily doped, base is less doped and made very thin and collector terminal is moderately doped. Collector has grater size than emitter and base terminal is thinner than both. (The thinner the base, the stronger the E-C electric field, and the larger the impact of a small current injected into the base. Explained clearly in active mode operation below) emitter terminal is moderate in size. A BJT has two types of transistors: NPN transistor PNP transistor NPN transistor : In an NPN transistor a p-type material is sandwiched between two n-type materials. [gallery ids="979,978" type="rectangular"] PNP transistor : In a PNP transistor a n-type material is sandwiched between two p-type materials. [gallery ids="989,990" type="rectangular"] Oper...

P-N junction diode

A P-N junction diode is a basic diode. It is the combination of P-type and N-type semiconductor. symbol : P-N junction and potential barrier : A P-N junction is the basic building block of many semiconductor devices like diodes and transistors. P -n  junctions are formed by joining  n -type and  p -type semiconductor materials. Since the  n -type region has a high electron concentration and the  p -type a high hole concentration this difference in concentration creates density mismatch across junction which results to creation of potential barrier. The value of potential barrier v b  is 0.3 for germanium and 0.7 for silicon. Working : Forward bias: Application of positive charge at p-side pushes holes towards potential barrier and similarly negative charge at N-side pushes electrons towards barrier if input voltage is grater than potential barrier then electrons diffuse from the  n -type side to the p-type side. Similarly, holes flow by diffusion from the p-type side to the n-type side...